Sains Malaysiana 54(7)(2025): 1775-1783

http://doi.org/10.17576/jsm-2025-5407-11

 

Kesan Pendopan Zr ke atas Morfologi, Struktur dan Sifat Optik Filem Nipis Nanorods TiO₂

(Effect of Zr Doping on Morphological, Structural and Optical Properties of TiO₂ Nanorod Thin Films)

 

MASLIANA MUSLIMIN^1,* & MOHAMMAD HAFIZUDDIN HJ JUMALI²

 

¹Bahagian Teknologi Industri, Agensi Nuklear Malaysia, Bangi, 43000 Kajang, Selangor, Malaysia

²Jabatan Fizik Gunaan, Fakulti Sains dan Teknologi, Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, Malaysia

 

Diserahkan: 4 Februari 2025/Diterima: 30 April 2025

 

Abstrak

Penyelidikan ini dijalankan bagi mengkaji kesan pendopan unsur Zr terhadap morfologi, struktur dan sifat optik filem nipis nanorod TiO₂ (TiO₂-NR). Filem nipis TiO₂-NR terdop Zr dengan kepekatan, 0.0 v/v % < x < 1.0 v/v % disediakan menggunakan kaedah hidroterma singkat pada suhu 170 °C selama 30 min. Analisis XRD menunjukkan pendopan Zr terhadap TiO₂-NR telah menghasilkan tiga satah utama iaitu (101), (111) dan (211). Namun, satah (111) lenyap pada kepekatan 0.5 v/v % dan 0.7 v/v %. Kecuali Zr > 0.7 v/v %, peningkatan kepekatan pendopan Zr dilihat telah menyebabkan pengecilan saiz nanorod melalui imej FESEM. Analisis PL bagi pendopan unsur Zr menunjukkan semua sampel mempunyai nilai keamatan puncak pancaran aras dalaman lebih tinggi berbanding TiO₂-NR. Keputusan ini menunjukkan pendopan Zr memainkan peranan penting dalam mengurangkan kecacatan hablur TiO₂NR dan meningkatkan pancaran foton bagi aplikasi optoelektronik seperti LED.   

Kata kunci: Diod pemancar cahaya (LED); fotoluminesen; rutil; TiO₂-NR; ZrO₂

 

Abstract

This research was conducted to study the effect of Zr doping on the morphology, structural and optical properties of TiO₂ nanorod (TiO₂-NR) thin films. Zr-doped TiO₂-NR thin films with a concentration of 0.0 v/v % < x < 1.0 v/v % were prepared using a facile hydrothermal method at 170 °C for 30 min. XRD analysis shows that the Zr doping produced three dominant planes, namely (101) (111) and (211) for TiO₂-NR. However, the (111) plane disappeared at concentrations of 0.5 v/v % and 0.7 v/v %.  Except for Zr > 0.7 v/v %, FESEM images showed that the size of nanorods is decreased with Zr doping. PL analysis displayed that, all Zr-doped samples have higher intensity values of deep level emission peaks than TiO₂-NR. These results show that Zr doping plays an important role in reducing the crystal defects of TiO₂NR and increasing the photon emission for optoelectronic applications.

Keywords: Light emitting diode (LED); photoluminescence; rutile; TiO₂-NR; ZrO₂

 

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*Pengarang untuk surat-menyurat; email: masliana@nm.gov.my